圖片僅供參考
製造商IC編號 | K4T51163QI-HCE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 32MX16 DDR2 |
共通IC編號 | K4T51163QI-HCE60 |
K4T51163QI-HCE600 | |
K4T51163QI-HCE6000 | |
K4T51163QI-HCE60000 | |
K4T51163QI-HCE60CV | |
K4T51163QI-HCE60T00 | |
K4T51163QI-HCE6T | |
K4T51163QI-HCE6T00 | |
K4T51163QI-HCE6TCV |
脚位/封装 | FBGA-84 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4T51163QI-HCE6000 | 10,240 | 2011+ | 索取報價 |
K4T51163QI-HCE6 | 10,240 | 2010 | 索取報價 |
K4T51163QI-HCE6 | 20,480 | 11 | 索取報價 |
K4T51163QI-HCE6 | 20,000 | 10+ | 索取報價 |
K4T51163QI-HCE6 | 20,480 | 索取報價 | |
K4T51163QI-HCE6 | 30,000 | 索取報價 | |
K4T51163QI-HCE6T00 | 20 | 索取報價 | |
K4T51163QI-HCE6 | 5,120 | 索取報價 | |
K4T51163QI-HCE6 | 660 | 索取報價 | |
K4T51163QI-HCE6 | 20,800 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM68B16CWPA-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWPA-3H 512MB DDR2 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWQC-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BEP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y5-C | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |