圖片僅供參考
製造商IC編號 | K4T51163QI-HIE7 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 32MX16 DDR2 |
共通IC編號 | K4T51163QI-HIE7000 |
脚位/封装 | FBGA-84 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | -40 C~+85 C |
速度 | 800 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM68B16CWQD-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
EM68B16CWQH-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
EM68B16CWQK-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS5162FFR-Y5I OR H5PS5162GFR | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HXI18T512160BF(L)-25E | TFBGA-84 | 1.8V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-E3I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-S5I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-S6I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CLFP-E3I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CLFP-S5I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |