K4T51163QI-HIE7

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4T51163QI-HIE7
Brand SAMSUNG
Item DDR2 SDRAM
Part No 32MX16 DDR2
Alternate Names K4T51163QI-HIE7000

Product Details

Package FBGA-84
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature -40 C~+85 C
Speed 800 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 10th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4T51163QI-HIE7000 15 1025 Get Quote
K4T51163QI-HIE7 28,069 11+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EM68B16CWQD-25IH FBGA-84 1.8 V 800 MBPS -40 C~+85 C
EM68B16CWQH-25IH FBGA-84 1.8 V 800 MBPS -40 C~+85 C
EM68B16CWQK-25IH FBGA-84 1.8 V 800 MBPS -40 C~+85 C
H5PS5162FFR-Y5I OR H5PS5162GFR FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HXI18T512160BF(L)-25E TFBGA-84 1.8V 800 MBPS -40 C~+85 C
HY5PS121621CFP-E3I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CFP-S5I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CFP-S6I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CLFP-E3I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CLFP-S5I FBGA-84 1.8 V 800 MBPS -40 C~+85 C