脚位/封装 |
TSOP-48
|
外包裝 |
|
無鉛/環保 |
無鉛/環保
|
電壓(伏) |
2.7V-3.6V
|
溫度規格 |
-40 C~+85 C
|
速度 |
25 NS
|
標準包裝數量 |
|
標準外箱 |
|
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0B is a 8G-bit NAND Memory with spare 256M-bit. A nd the K9WAG08U1B is a 16G-bit
NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most cost-effective solution for the solid state application mar-
ket. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in
typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as
the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems
can take advantage of the K9K8G08U0B/K9WAG08U1B′s extended reliability of 100K program/erase cycles by providing ECC(Error
Correcting Code) with real time mapping-out algorithm. The K9K8G08U0B/K9WAG08U1B is an optimum solution for large nonvola-
tile storage applications such as solid state file storage and other portable applications requiring non-volatility.