M29DW323DB70N6

SUMMARY DESCRIPTION The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block architecture. The M29DW323D has an array of 8 parameter and 63 main blocks and is divided into two Banks, A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible in Bank B and vice versa. Only one bank at a time is allowed to be in program or erase mode. The bank architecture is summarized in Table 2. M29DW323DT locates the Parameter Blocks at the top of the memory address space while the M29DW323DB locates the Parameter Blocks starting from the bottom. M29DW323D has an extra 32 KWord (x16 mode) or 64 KByte (x8 mode) block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information.