Gehäuse | FBGA-90 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+70 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Bit Organization | x32 |
Package Material | lead & halogen free |
Hynix Memory | H |
No Of Banks | 4 banks |
Die Generation | 8th |
Product Family | DRAM |
Product Mode | SDR |
Shipping Method | tray |
Teilenummer | Menge | Datecode | |
---|---|---|---|
H57V2622GMR-60C | 873 | Anfrage senden | |
H57V2622GMR-60C | 3.028 | 11+ | Anfrage senden |
H57V2622GMR-60C | 10.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EDS2532AABH-6B-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABH-6BL-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABH-75 #160 | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABH6BL | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABJ-6B | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABJ6BE | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABJ6BLE | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AAJA-6B | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532JEBH-6B-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
IS42SM32800E-6 | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |