脚位/封装 | FBGA-90 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+70 C |
速度 | 166 MHZ |
标准包装数量 | |
标准外箱 | |
Bit Organization | x32 |
Package Material | lead & halogen free |
Hynix Memory | H |
No Of Banks | 4 banks |
Die Generation | 8th |
Product Family | DRAM |
Product Mode | SDR |
Shipping Method | tray |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
EDS2532AABH-6B-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABH-6BL-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABH-75 #160 | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABH6BL | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABJ-6B | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABJ6BE | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AABJ6BLE | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532AAJA-6B | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
EDS2532JEBH-6B-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
IS42SM32800E-6 | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |