| 脚位/封装 | FBGA-90 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 3.3 V |
| 溫度規格 | 0 C~+70 C |
| 速度 | 166 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Bit Organization | x32 |
| Package Material | lead & halogen free |
| No Of Banks | 4 banks |
| Hynix Memory | H |
| Die Generation | 8th |
| Product Family | DRAM |
| Product Mode | SDR |
| Shipping Method | tray |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EDS2532AABH-6B-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AABH-6BL-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AABH-75 #160 | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AABH6BL | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AABJ-6B | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AABJ6BE | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AABJ6BLE | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532AAJA-6B | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS2532JEBH-6B-E | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |
| IS42SM32800E-6 | FBGA-90 | 3.3 V | 166 MHZ | 0 C~+70 C |