Bilder dienen nur der Illustration
| Hersteller-Nummer | K4A8G165WB-BCWE |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR4 SDRAM |
| IC-Code | 512MX16 DDR4 |
| Andere Bezeichnungen | K4A8G165WB-BCWE0CV |
| Gehäuse | FBGA-96 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.2 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 3200 MBPS |
| Standard Stückzahl | 1120 |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x16 |
| Density | 8Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 3rd Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4A8G165WB-BCWE | 17.920 | 25+ | Anfrage senden |
| K4A8G165WB-BCWE | 3.000 | 2023 | Anfrage senden |
| K4A8G165WB-BCWE | 2.240 | Anfrage senden | |
| K4A8G165WB-BCWE | 13.440 | 22 | Anfrage senden |
| K4A8G165WB-BCWE | 0 | 22+ | Anfrage senden |
| K4A8G165WB-BCWE | 0 | Anfrage senden | |
| K4A8G165WB-BCWE | 10.000 | 22+ | Anfrage senden |
| K4A8G165WB-BCWE | 10.000 | Anfrage senden | |
| K4A8G165WB-BCWE | 20.160 | Anfrage senden | |
| K4A8G165WB-BCWE | 11.200 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| MT40A512M16LY-062E:E | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5AN8G6NCIR-XNIR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-XNCR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NDJR-XNC | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| H5AN8G6NDJR-XNCR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| IS43QR16512A-062B | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| IS43QR16512A-062BL | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| IS43QR16512B-062AABL | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| K4A8G165WC-BCWE | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| K4A8G165WC-BCWE000 | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |