K4B4G0846D/E-BCK0

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4B4G0846D/E-BCK0
Hersteller SAMSUNG
Produktkategorie DDR3 SDRAM
IC-Code 512MX8 DDR3

Produktbeschreibung

Gehäuse FBGA-78
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.5 V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 1600 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 512M
Bit Organization x8
Density 4G
Internal Banks 8 Banks
Generation 5th Generation

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HXI15H4G800CF-13K TFBGA-78 1.5V 1600 MBPS -40 C~+85 C
IS43TR85120A-125KBLA1 BGA-78 1.5 V 1600 MBPS -40 C~+85 C
IS43TR85120A-125KBLI BGA-78 1.5 V 1600 MBPS -40 C~+85 C
IS43TR85120AL-125KBI BGA-78 1.35V/1.5V 1600 MBPS -40 C~+85 C
IS43TR85120AL-125KBLA1 BGA-78 1.35V/1.5V 1600 MBPS -40 C~+85 C
IS43TR85120AL-125KBLI BGA-78 1.35V/1.5V 1600 MBPS -40 C~+85 C
IS43TR85120B-125KBI BGA-78 1.5 V 1600 MBPS -40 C~+85 C
IS43TR85120B-125KBLA1 BGA-78 1.5 V 1600 MBPS -40 C~+85 C
IS43TR85120B-125KBLI BGA-78 1.5 V 1600 MBPS -40 C~+85 C
IS43TR85120BL-125KBI BGA-78 1.35V/1.5V 1600 MBPS -40 C~+85 C