圖片僅供參考
| 製造商IC編號 | K4B4G0846D/E-BCK0 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3 SDRAM |
| IC代碼 | 512MX8 DDR3 |
| 脚位/封装 | FBGA-78 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.5 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 1600 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 5th Generation |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| HXI15H4G800CF-13K | TFBGA-78 | 1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120A-125KBLA1 | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120A-125KBLI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120AL-125KBI | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120AL-125KBLA1 | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120AL-125KBLI | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120B-125KBI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120B-125KBLA1 | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120B-125KBLI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120BL-125KBI | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |