图片仅供参考
| 制造商IC编号 | K4B4G0846D/E-BCK0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 512MX8 DDR3 |
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 1600 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 5th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HXI15H4G800CF-13K | TFBGA-78 | 1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120A-125KBLA1 | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120A-125KBLI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120AL-125KBI | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120AL-125KBLA1 | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120AL-125KBLI | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120B-125KBI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120B-125KBLA1 | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120B-125KBLI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+85 C |
| IS43TR85120BL-125KBI | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+85 C |