Bilder dienen nur der Illustration
Hersteller-Nummer | K4B4G0846E-BYMA |
Hersteller | SAMSUNG |
Produktkategorie | DDR3L SDRAM |
IC-Code | 512MX8 DDR3L |
Andere Bezeichnungen | K4B4G0846E- BYMATCV |
K4B4G0846E-BYMA0 | |
K4B4G0846E-BYMA000 | |
K4B4G0846E-BYMA0CV | |
K4B4G0846E-BYMAT00 |
Gehäuse | FBGA-78 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.35V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4B4G0846E-BYMA | 100,000+ | 2021+ | Anfrage senden |
K4B4G0846E-BYMA | 1.155 | 2YEAR | Anfrage senden |
K4B4G0846E-BYMA | 12.800 | 21+ | Anfrage senden |
K4B4G0846E-BYMA | 22.400 | 19+ | Anfrage senden |
K4B4G0846E-BYMA | 2.560 | 22+ | Anfrage senden |
K4B4G0846E-BYMA | 50.000 | 2021+ | Anfrage senden |
K4B4G0846E-BYMA | 10.240 | SAMSUNG | Anfrage senden |
K4B4G0846E-BYMA | 23 | 1846+PB | Anfrage senden |
K4B4G0846E-BYMA | 3.314 | Anfrage senden | |
K4B4G0846E-BYMA000 | 10.000 | 21+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
H5TC4G83AFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83DFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |