Bilder dienen nur der Illustration
Hersteller-Nummer | K4B4G0846E-BYMA |
Hersteller | SAMSUNG |
Produktkategorie | DDR3L SDRAM |
IC-Code | 512MX8 DDR3L |
Andere Bezeichnungen | K4B4G0846E- BYMATCV |
K4B4G0846E-BYMA0 | |
K4B4G0846E-BYMA000 | |
K4B4G0846E-BYMA0CV | |
K4B4G0846E-BYMAT00 |
Gehäuse | FBGA-78 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.35V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4B4G0846E-BYMA | 10.240 | Anfrage senden | |
K4B4G0846E-BYMA | 20.480 | Anfrage senden | |
K4B4G0846E-BYMA000 | 51.200 | 23+ | Anfrage senden |
K4B4G0846E-BYMA000 | 100.000 | 23+ | Anfrage senden |
K4B4G0846E-BYMA | 92 | 22+ | Anfrage senden |
K4B4G0846E-BYMA000 | 3.360 | 23+ | Anfrage senden |
K4B4G0846E-BYMA000 | 51.301 | 23+ | Anfrage senden |
K4B4G0846E-BYMA | 51.200 | Anfrage senden | |
K4B4G0846E-BYMA | 100,000+ | DC23+ | Anfrage senden |
K4B4G0846E-BYMA | 1.280 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
H5TC4G83EFR-PBA/RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83EFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83EFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G08464-BYMA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846D-BYMA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846D-BYMATCV | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846E-BCMA IC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846E-BYMA 4882 | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846E-BYMA/BCNB | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B4G0846E-BYMA000/H5TQ4G83EFR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |