K4B4G1646E-BYMAX
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B4G1646E-BYMAX |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3 SDRAM |
| IC-Code | 256MX16 DDR3 |
Produktbeschreibung
| Gehäuse | FBGA-96 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1866 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low VDD(1.35V) |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4B4G1646E-BYMAX | 949 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM6GE16EWAKG-10H | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63AFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDC T R | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDA/PBA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDC D3 256X | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63M/AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |