图片仅供参考
制造商IC编号 | K4B4G1646E-BYMAX |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3 SDRAM |
IC代码 | 256MX16 DDR3 |
脚位/封装 | FBGA-96 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.5 V |
温度规格 | 0 C~+85 C |
速度 | 1866 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B4G1646E-BYMAX | 949 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
EM6GE16EWAKG-10H | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63AFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63CFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63CFR-RDC T R | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63CFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63EFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63EFR-RDA/PBA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63EFR-RDC D3 256X | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G63M/AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |