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| Manufacturer Part No | K4B4G1646E-BYMAX |
| Brand | SAMSUNG |
| Item | DDR3L SDRAM |
| Part No | 256MX16 DDR3L |
| Package | FBGA-96 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.35 V |
| Temperature | 0 C~+85 C |
| Speed | 1866 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 6th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4B4G1646E-BYMAX | 949 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EM6HE16EWAKG-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAS | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-PBA/RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |