K4S283233F-FN75
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4S283233F-FN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 4MX32 SD |
| Andere Bezeichnungen | K4S283233F-FN750 |
| K4S283233F-FN7500 | |
| K4S283233F-FN75000 |
Produktbeschreibung
| Gehäuse | FBGA-90 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 3.0V/3.3V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 4M |
| Bit Organization | x32 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 7th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4S283233F-FN75 | 5.500 | Anfrage senden | |
| K4S283233F-FN75 | 104 | 05+ | Anfrage senden |
| K4S283233F-FN75 | 104 | 05 | Anfrage senden |
| K4S283233F-FN75 | 0 | Anfrage senden | |
| K4S283233F-FN75 | 1.918 | 2007+ | Anfrage senden |
| K4S283233F-FN75 | 1.000 | Anfrage senden | |
| K4S283233F-FN75000 | 312 | Anfrage senden | |
| K4S283233F-FN75 | 2.000 | Anfrage senden | |
| K4S283233F-FN75000 | 11.688 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4M283232H-HN75 | FBGA-90 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FG75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FG7L | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FN75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FN750 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FN75000 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FN75T | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-FN75T00 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-HE75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M283233H-HG75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |