Bilder dienen nur der Illustration
Hersteller-Nummer | K4S641633F-BN75 |
Hersteller | SAMSUNG |
Produktkategorie | SDRAM MOBILE |
IC-Code | 4MX16 SD |
Gehäuse | FBGA-54 |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.0V/3.3V |
Betriebstemperatur | -25 C~+85 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 4M |
Bit Organization | x16 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 7th Generation |
Power | Low, i-TCSR |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4S641633F-BN75 | 1.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4M641633K-RN750 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633KBN75-TJR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4M641633KRN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633F-FN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633F-RN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633F-RN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-BN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-BN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-BN75000 25 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-F75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |