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Hersteller-Nummer | K4S641633F-BN75 |
Hersteller | SAMSUNG |
Produktkategorie | SDRAM MOBILE |
IC-Code | 4MX16 SD |
Gehäuse | FBGA-54 |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.0V/3.3V |
Betriebstemperatur | -25 C~+85 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 4M |
Bit Organization | x16 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 7th Generation |
Power | Low, i-TCSR |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4S641633F-BN75 | 1.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4S641633H-R(B)L | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RE75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RL75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN7 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75( ) | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75T | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-TC75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |