Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QQ-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QQ-HCE60 |
K4T1G164QQ-HCE600 | |
K4T1G164QQ-HCE6000 | |
K4T1G164QQ-HCE60JR | |
K4T1G164QQ-HCE6T | |
K4T1G164QQ-HCE6T00 | |
K4T1G164QQ-HCE6T000 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QQ-HCE6 | 41.996 | Anfrage senden | |
K4T1G164QQ-HCE6 | 15.000 | 9 | Anfrage senden |
K4T1G164QQ-HCE6 | 33.600 | Anfrage senden | |
K4T1G164QQ-HCE6 | 33.600 | Anfrage senden | |
K4T1G164QQ-HCE6T | 42.000 | 09+ | Anfrage senden |
K4T1G164QQ-HCE6 | 10.080 | 09+ | Anfrage senden |
K4T1G164QQ-HCE6 | 48.000 | Anfrage senden | |
K4T1G164QQ-HCE6 | 50.000 | 09+ | Anfrage senden |
K4T1G164QQ-HCE6 | 3.360 | 09+ | Anfrage senden |
K4T1G164QQ-HCE6 | 5.120 | 09+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |