K4T51163QG-HCF7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QG-HCF7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
| Andere Bezeichnungen | :K4T51163QG-HCF7 |
| K4T51163QG-HCF7000 | |
| K4T51163QG-HCF70JP | |
| K4T51163QG-HCF7T |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 8th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QG-HCF7 | 2.560 | Anfrage senden | |
| K4T51163QG-HCF7 | 2.000 | Anfrage senden | |
| K4T51163QG-HCF7 | 825 | 0922+ | Anfrage senden |
| K4T51163QG-HCF7 | 7.040 | 2010+ | Anfrage senden |
| K4T51163QG-HCF7 | 190 | Anfrage senden | |
| K4T51163QG-HCF7 | 10.000 | 14+ | Anfrage senden |
| K4T51163QG-HCF7 | 1.500 | 8 | Anfrage senden |
| K4T51163QG-HCF7 | 7.680 | Anfrage senden | |
| K4T51163QG-HCF7 | 0 | Anfrage senden | |
| K4T51163QG-HCF7 | 429 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM68B16CWPA-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWPQ-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQC25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQD-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQD-25H: | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQE/CWQG-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQH-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQH-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68B16CWQL-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| H5PS5162FFR-S5C/-R | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |