Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QI-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QI-HCE60 |
K4T51163QI-HCE600 | |
K4T51163QI-HCE6000 | |
K4T51163QI-HCE60000 | |
K4T51163QI-HCE60CV | |
K4T51163QI-HCE60T00 | |
K4T51163QI-HCE6T | |
K4T51163QI-HCE6T00 | |
K4T51163QI-HCE6TCV |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QI-HCE6 | 35 | 1134 | Anfrage senden |
K4T51163QI-HCE6 | 35 | Anfrage senden | |
K4T51163QI-HCE6 | 868 | 1113+ | Anfrage senden |
K4T51163QI-HCE6 | 1.357 | 11+ | Anfrage senden |
K4T51163QI-HCE6 | 564 | 1113+ | Anfrage senden |
K4T51163QI-HCE6 | 1.094 | 1028+ | Anfrage senden |
K4T51163QI-HCE6 | 307 | 1143+ | Anfrage senden |
K4T51163QI-HCE6 | 394 | 1113+ | Anfrage senden |
K4T51163QI-HCE6 | 1.114 | 1028+ | Anfrage senden |
K4T51163QI-HCE6 | 793 | 11+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H32M16NF-25E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E ES:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E-H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:H TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:H TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:M | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25E:M TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16NF-25TRE IT:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |