Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QI-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QI-HCE60 |
K4T51163QI-HCE600 | |
K4T51163QI-HCE6000 | |
K4T51163QI-HCE60000 | |
K4T51163QI-HCE60CV | |
K4T51163QI-HCE60T00 | |
K4T51163QI-HCE6T | |
K4T51163QI-HCE6T00 | |
K4T51163QI-HCE6TCV |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QI-HCE6 | 2.000 | Anfrage senden | |
K4T51163QI-HCE6 | 199 | 1125+ | Anfrage senden |
K4T51163QI-HCE6 | 670 | 10+ | Anfrage senden |
K4T51163QI-HCE6 | 1.008 | 2010+ | Anfrage senden |
K4T51163QI-HCE6 | 400 | 2013+ | Anfrage senden |
K4T51163QI-HCE6 | 100,000+ | Anfrage senden | |
K4T51163QI-HCE6 | 900 | 13+ | Anfrage senden |
K4T51163QI-HCE6 | 400 | 12+ | Anfrage senden |
K4T51163QI-HCE6 | 1.280 | DC11+ | Anfrage senden |
K4T51163QI-HCE6 | 6.000 | 10+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EM68B16CWPA-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWPA-3H 512MB DDR2 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWQC-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BEP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y5-C | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |