K4T51163QI-HCE6

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T51163QI-HCE6
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 32MX16 DDR2
Andere Bezeichnungen K4T51163QI-HCE60
K4T51163QI-HCE600
K4T51163QI-HCE6000
K4T51163QI-HCE60000
K4T51163QI-HCE60CV
K4T51163QI-HCE60T00
K4T51163QI-HCE6T
K4T51163QI-HCE6T00
K4T51163QI-HCE6TCV

Produktbeschreibung

Gehäuse FBGA-84
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 667 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 10th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T51163QI-HCE6 1.343 11+ Anfrage senden
K4T51163QI-HCE6 5.000 11+ Anfrage senden
K4T51163QI-HCE6 2.500 10+ Anfrage senden
K4T51163QI-HCE6 564 201113+ Anfrage senden
K4T51163QI-HCE6 868 201113+ Anfrage senden
K4T51163QI-HCE6 75 N/A Anfrage senden
K4T51163QI-HCE6000 1.280 Anfrage senden
K4T51163QI-HCE6 12.500 Anfrage senden
K4T51163QI-HCE6 9.600 14+ Anfrage senden
K4T51163QI-HCE6 11.350 16+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
EM68B16CWPA-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWPA-3H 512MB DDR2 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWQC-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BEP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y5-C FBGA-84 1.8 V 667 MBPS 0 C~+85 C