K4T51163QI-HCE6

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T51163QI-HCE6
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 32MX16 DDR2
Andere Bezeichnungen K4T51163QI-HCE60
K4T51163QI-HCE600
K4T51163QI-HCE6000
K4T51163QI-HCE60000
K4T51163QI-HCE60CV
K4T51163QI-HCE60T00
K4T51163QI-HCE6T
K4T51163QI-HCE6T00
K4T51163QI-HCE6TCV

Produktbeschreibung

Gehäuse FBGA-84
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 667 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 10th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T51163QI-HCE6 35 1134 Anfrage senden
K4T51163QI-HCE6 35 Anfrage senden
K4T51163QI-HCE6 868 1113+ Anfrage senden
K4T51163QI-HCE6 1.357 11+ Anfrage senden
K4T51163QI-HCE6 564 1113+ Anfrage senden
K4T51163QI-HCE6 1.094 1028+ Anfrage senden
K4T51163QI-HCE6 307 1143+ Anfrage senden
K4T51163QI-HCE6 394 1113+ Anfrage senden
K4T51163QI-HCE6 1.114 1028+ Anfrage senden
K4T51163QI-HCE6 793 11+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HYB18T512160BF3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160BF3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160TC-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160TCL-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160TF-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160TFL-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512161BF-33 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512161BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC512160AF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC512160B2F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C