Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QJ-BCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QJ-BCE6000 |
K4T51163QJ-BCE6000: | |
K4T51163QJ-BCE6T | |
K4T51163QJ-BCE6T00 | |
K4T51163QJ-BCE6TCV | |
K4T51163QJBCE600 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QJ-BCE6T00 | 20.829 | Anfrage senden | |
K4T51163QJ-BCE6T00 | 19.629 | Anfrage senden | |
K4T51163QJ-BCE6T00 | 18.021 | Anfrage senden | |
K4T51163QJ-BCE6 | 4.000 | Anfrage senden | |
K4T51163QJ-BCE6T00 | 22.417 | Anfrage senden | |
K4T51163QJ-BCE6T00 | 20.051 | Anfrage senden | |
K4T51163QJ-BCE6000 | 18.266 | Anfrage senden | |
K4T51163QJ-BCE6 | 136 | 14+ | Anfrage senden |
K4T51163QJ-BCE6 | 2.500 | 14+ | Anfrage senden |
K4T51163QJ-BCE6 | 10.000 | 16+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18T512160BF3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160BF3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TCL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TFL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512161BF-33 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512161BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC512160AF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC512160B2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |