K4T51164QI-HCF7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51164QI-HCF7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 10th Generation |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HY5PS5162FFR-S5C | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T51162QE-ZCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T51164QQ-BCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QG-HCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QG-HCF7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QN-BCE7T00 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |