K4T51164QI-HCF7
产品概述
图片仅供参考
| 制造商IC编号 | K4T51164QI-HCF7 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 32MX16 DDR2 |
产品详情
| 脚位/封装 | FBGA |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 800 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 10th Generation |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY5PS5162FFR-S5C | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T51162QE-ZCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T51164QQ-BCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QG-HCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QG-HCF7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QN-BCE7T00 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |