K4T51164QI-HCF7
Product Overview
Images are for reference only
| Manufacturer Part No | K4T51164QI-HCF7 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 32MX16 DDR2 |
Product Details
| Package | FBGA |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 800 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 10th Generation |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| HY5PS5162FFR-S5C | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T51162QE-ZCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T51164QQ-BCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QG-HCE7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QG-HCF7 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |
| K4T5116QN-BCE7T00 | FBGA | 1.8 V | 800 MBPS | 0 C~+85 C |