K9F5608Q0B-DIB0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K9F5608Q0B-DIB0 |
| Hersteller | SAMSUNG |
| Produktkategorie | FLASH-NAND |
| IC-Code | 32MX8 NAND SLC |
Produktbeschreibung
| Gehäuse | TBGA-63 |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 1.70V~1.95V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 50 NS |
| Standard Stückzahl | 960 |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x8 |
| Density | 256M |
| Pre Prog Version | None |
| Generation | 3rd Generation |
| Mode | Normal |
| Classification | SLC Normal |
| Cust Bad Block | Include Bad Block |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K9F5608Q0B-DIB0 | 23.824 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K9F56089QOC-DIB00 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIB0 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIB0 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIB0000 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIB0T00 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIBO | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIBOT00 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608Q0C-DIBT00 | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608QOB-DIBO | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |
| K9F5608QOC-DBIO | TBGA-63 | 1.70V~1.95V | 50 NS | -40 C~+85 C |