| Gehäuse |
FBGA-63
|
| Verpackung |
TRAY
|
| RoHS |
RoHS
|
| Spannungsversorgung |
1.65V-1.95
|
| Betriebstemperatur |
-40 C~+85 C
|
| Geschwindigkeit |
50 NS
|
| Standard Stückzahl |
1280
|
| Abmessungen Karton |
|
GENERAL DESCRIPTION
Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8capacity. The device is offered in 1.8V, 2.7V, 3.3tsVcc. I
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as comm and
input. The on-chip write control automates all program and er ase functions including pulse repetition, where required, and in ternal
verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
