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Manufacturer Part No | H5TQ4G63AFR-RDA |
Brand | SK HYNIX |
Item | DDR3 SDRAM |
Part No | 256MX16 DDR3 |
Package | FBGA-96 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.5 V |
Temperature | 0 C~+85 C |
Speed | 1866 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Operating Temperature | commercial temperature(0°C~85°C) & 1.35 VDD power |
Package Material | lead & halogen free(ROHS compliant) |
Hynix Memory | H |
Die Generation | 2nd |
No Of Banks | 8 banks |
Product Family | DRAM |
Shipping Method | tray |
Description The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4B4G1646E-BCMA00 | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BCMA0DT | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BCMAT | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BCMAT0DT | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BCMB | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BCNB/BYMA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BYK0/BYMA/BCMA/BCNB | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646E-BYMAX | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646F-BCMA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
K4B4G1646F-BYMA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |