K4A4G165WE-BCR

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4A4G165WE-BCR
Brand SAMSUNG
Item DDR4 SDRAM
Part No 256MX16 DDR4

Product Details

Package FBGA-96
Outpack TRAY
RoHS RoHS
Voltage 1.2V
Temperature 0 C~+85 C
Speed 2400 MBPS
Std. Pack Qty 1120
Std. Carton
Number Of Words 256M
Bit Organization x16
Density 4Gb
Internal Banks 16 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4A4G165WE-BCR 10,000 17+ Get Quote
K4A4G165WE-BCR 12,320 17+ Get Quote
K4A4G165WE-BCR 12,320 DC2017+ Get Quote
K4A4G165WE-BCR 11,200 17+ Get Quote
K4A4G165WE-BCR 22,400 DC2017+ Get Quote
K4A4G165WE-BCR 2,240 DC2017+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
H5AN4G6NAFR-UHC FBGA-96 1.2V 2400 MBPS 0 C~+85 C
H5AN4G6NAFR-UHIR FBGA-96 1.2V 2400 MBPS 0 C~+85 C
H5AN4G6NAJR-UHC FBGA-96 1.2V 2400 MBPS 0 C~+85 C
H5AN4G6NBJR-UHC FBGA-96 1.2V 2400 MBPS 0 C~+85 C
H5AN4G6NBJR-UHCR FBGA-96 1.2V 2400 MBPS 0 C~+85 C
H5AN4G6NBJR-UHIR FBGA-96 1.2V 2400 MBPS 0 C~+85 C
IS43QR16256A-083PBL FBGA-96 1.2V 2400 MBPS 0 C~+85 C
IS43QR16256A-083RB FBGA-96 1.2V 2400 MBPS 0 C~+85 C
IS43QR16256A-083RBL FBGA-96 1.2V 2400 MBPS 0 C~+85 C
IS43QR16256B-083RB FBGA-96 1.2V 2400 MBPS 0 C~+85 C