Images are for reference only
Manufacturer Part No | K4A8G165WB-BIWE |
Brand | SAMSUNG |
Item | DDR4 SDRAM |
Part No | 512MX16 DDR4 |
Alternate Names | K4A8G165W B-BIWE0CV |
K4A8G165WB-BIWETCV |
Package | FBGA-96 |
Outpack | |
RoHS | RoHS |
Voltage | 1.2V |
Temperature | -40 C~+85 C |
Speed | 3200 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 512M |
Bit Organization | x16 |
Density | 8Gb |
Internal Banks | 16 Banks |
Generation | 3rd Generation |
Power | Normal Power |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT40A512M16LY-062E IT:E | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+95 C |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
IS43QR16512A-062BLA1 | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |
IS43QR16512A-062BLI | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |
K4A8G165W B-BIWEOCV | FBGA-96 | 1.2V | 3200 MBPS | -40 C~+85 C |