K4A8G165WC-BIWE

Product Overview

IC Picture

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Manufacturer Part No K4A8G165WC-BIWE
Brand SAMSUNG
Item DDR4 SDRAM
Part No 512MX16 DDR4
Alternate Names K4A8G165WC-BIWE0CV
K4A8G165WC-BIWETCT
K4A8G165WC-BIWETCV

Product Details

Package FBGA-96
Outpack TRAY
RoHS RoHS
Voltage 1.2 V
Temperature -40 C~+85 C
Speed 2666 MBPS
Std. Pack Qty 1120
Std. Carton
Number Of Words 512M
Bit Organization x16
Density 8Gb
Internal Banks 16 Banks
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4A8G165WC-BIWE 17,920 25+ Get Quote
K4A8G165WC-BIWE 4,000 2025+ Get Quote
K4A8G165WC-BIWE 4,000 25+ Get Quote
K4A8G165WC-BIWE 11,200 DC24+ Get Quote
K4A8G165WC-BIWE 0 25+ Get Quote
K4A8G165WC-BIWE 0 Get Quote
K4A8G165WC-BIWE 10,000 2024 Get Quote
K4A8G165WC-BIWE 10,080 23 Get Quote
K4A8G165WC-BIWE 1,120 22+ Get Quote
K4A8G165WC-BIWE 10,000 24+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
AS4C512M16D4-75BIN FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
AS4C512M16D4-75BINTR FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
IS43QR16512A-075VBLA1 FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
IS43QR16512A-075VBLI FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
IS43QR16512A-075VBLI-TR FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
IS43QR16512B-075VBLI FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WB-BITD FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WB-BITDTCV FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BITD FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BITD U FBGA-96 1.2 V 2666 MBPS -40 C~+85 C