K4B1G0846F-HYF8

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4B1G0846F-HYF8
Brand SAMSUNG
Item DDR3 SDRAM
Part No 128MX8 DDR3
Alternate Names K4B1G0846F-HYF8000

Product Details

Package FBGA-78
Outpack
RoHS RoHS
Voltage 1.35V
Temperature 0 C~+85 C
Speed 1066 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 128M
Bit Organization x8
Density 1G
Internal Banks 8 Banks
Generation 7th Generation
Power Low VDD(1.35V)

Available Offers

Description Qty Datecode
K4B1G0846F-HYF8 4,000 Get Quote
K4B1G0846F-HYF8 8,841 Get Quote
K4B1G0846F-HYF8 2,000 2009+ Get Quote
K4B1G0846F-HYF8000 4,858 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4B1G0846C-CF8 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846C-ZCF8 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846D-ACF8 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846D-HCF0 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846D-HCF00HB FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846D-HCF8 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846D-HCF8000 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846D-HYF8 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846E-HCF8 FBGA-78 1.35V 1066 MBPS 0 C~+85 C
K4B1G0846E-HCF8000 FBGA-78 1.35V 1066 MBPS 0 C~+85 C