K4B2G1646E-HCH9

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4B2G1646E-HCH9
Brand SAMSUNG
Item DDR3 SDRAM
Part No 128MX16 DDR3
Alternate Names K4B2G1646E-HCH9000

Product Details

Package FBGA-96
Outpack
RoHS RoHS
Voltage 1.5 V
Temperature 0 C~+85 C
Speed 1333 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 128M
Bit Organization x16
Density 2G
Internal Banks 8 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4B2G1646E-HCH9 10,000 Get Quote
K4B2G1646E-HCH9 50,400 12+ Get Quote
K4B2G1646E-HCH9 4,000 10+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4B2G1646CH9DR3 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646CHPH9 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BCH9 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BCH90 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BCH9000 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BCH9T FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BCH9T00 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BIH9 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646E-BPH9 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C
K4B2G1646EBIH9000 FBGA-96 1.5 V 1333 MBPS 0 C~+85 C