K4B4G1646E-BYK0/BCMA
Product Overview
Images are for reference only
| Manufacturer Part No | K4B4G1646E-BYK0/BCMA |
| Brand | SAMSUNG |
| Item | DDR3L SDRAM |
| Part No | 256MX16 DDR3L |
Product Details
| Package | FBGA-96 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.35V |
| Temperature | 0 C~+85 C |
| Speed | 1866 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low VDD(1.35V) |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| MT41K256M16TW-107 M ES:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107 M:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107 MICRON | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107 N | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107 P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107 TI:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107 V:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107: | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107: P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107:N | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |