K4E160812C-FC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160812C-FC50
Brand SAMSUNG
Item DRAM
Part No 2MX8 EDO

Product Details

Package TSOP-28
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x8
Density 16M
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E160812C-FC50 2,258 2006+ Get Quote
K4E160812C-FC50 8,336 2005+ Get Quote
K4E160812C-FC50 12,000 Get Quote
K4E160812C-FC50 10,000 2003+ Get Quote
K4E160812C-FC50 20,000 2003+ Get Quote
K4E160812C-FC50 9,800 2003+ Get Quote
K4E160812C-FC50 6,988 2003+ Get Quote
K4E160812C-FC50 15,000 2003+ Get Quote
K4E160812C-FC50 5,560 03+ Get Quote
K4E160812C-FC50 9,424 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160812D-BC50T00 TSOP-28 3.3 V 50 NS 0 C~+85 C
K4E160812D-BC50T50 TSOP-28 3.3 V 50 NS 0 C~+85 C
K4E160812D-FC50 TSOP-28 3.3 V 50 NS 0 C~+85 C
K4E160812D-FC5000 TSOP-28 3.3 V 50 NS 0 C~+85 C
K4E160812D-FC50000 TSOP-28 3.3 V 50 NS 0 C~+85 C
K4E160812D-TC50T TSOP-28 3.3 V 50 NS 0 C~+85 C