K4E160812D-BC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160812D-BC50
Brand SAMSUNG
Item DRAM
Part No 2MX8 EDO
Alternate Names K4E160812D-BC50000
K4E160812D-BC50T
K4E160812D-BC50T00

Product Details

Package SOJ-28
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x8
Density 16M
Power Normal Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E160812D-BC50 5,500 Get Quote
K4E160812D-BC50 720 2010+ Get Quote
K4E160812D-BC50 4,500 2008+ Get Quote
K4E160812D-BC50 5,000 2008+ Get Quote
K4E160812D-BC50 2,258 2005+ Get Quote
K4E160812D-BC50 8,336 2005+ Get Quote
K4E160812D-BC50 3,200 08+ Get Quote
K4E160812D-BC50 5,000 Get Quote
K4E160812D-BC50 12,000 Get Quote
K4E160812D-BC50 3,500 2004+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160812CJC50 SOJ-28 3.3 V 50 NS 0 C~+85 C
K4E160812DJC50 SOJ-28 3.3 V 50 NS 0 C~+85 C