K4E170412D-FL50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E170412D-FL50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x4
Power Low Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E170412D-FL50 2,000 Get Quote
K4E170412D-FL50 8,336 05+ Get Quote
K4E170412D-FL50 8,336 2005+ Get Quote
K4E170412D-FL50 12,000 Get Quote
K4E170412D-FL50 5,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160412C-BC50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160412C-BC50000 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160412C-BL50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160412C-FL50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160412D-BC50000 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160412D-BL50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160412D-FL50 FBGA 3.3 V 50 NS 0 C~+85 C