K4E171612C-GE50000

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E171612C-GE50000
Brand SAMSUNG
Item DRAM
Part No 1MX16 EDO
Alternate Names K4E171612C-GE50000(00

Product Details

Package FBGA
Outpack TRAY
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x16
Power Normal
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E171612C-GE50000 10,150 99+ Get Quote
K4E171612C-GE50000 8,633 00+ Get Quote
K4E171612C-GE50000 1,055 00+ Get Quote