K4E641611E-TC50

Product Overview

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Manufacturer Part No K4E641611E-TC50
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E641611E-TC50000

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4E641611E-TC50 4,000 Get Quote
K4E641611E-TC50 2,258 2006+ Get Quote
K4E641611E-TC50 3,200 08+ Get Quote
K4E641611E-TC50 1,800 07+ Get Quote
K4E641611E-TC50 12,000 Get Quote
K4E641611E-TC50 8,336 2005+ Get Quote
K4E641611E-TC50 10,000 2003+ Get Quote
K4E641611E-TC50 20,000 2003+ Get Quote
K4E641611E-TC50 1,800 2003+ Get Quote
K4E641611E-TC50 16,390 2003+ Get Quote