K4E641612B-TL50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E641612B-TL50
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Low Power
Generation 3rd Generation

Available Offers

Description Qty Datecode
K4E641612B-TL50 12,000 Get Quote
K4E641612B-TL50 6,000 2003+ Get Quote
K4E641612B-TL50 17,630 2003+ Get Quote
K4E641612B-TL50 9,000 Get Quote
K4E641612B-TL50 10,222 03+ Get Quote
K4E641612B-TL50 6,000 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416120-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416120-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416124ETC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TC50T00 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC5 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC50000 TSOP2(50) 5.0 V 50 NS 0 C~+85 C