K4E641612ETE50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E641612ETE50
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal
Generation 6th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416120-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416120-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416124ETC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TC50T00 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC5 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C