K4F660812D-TC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4F660812D-TC50
Brand SAMSUNG
Item DRAM
Part No 8MX8 FP
Alternate Names K4F660812D-TC50000
K4F660812DTC50

Product Details

Package TSOP2(32)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x8
Generation 5th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4F660812DTC50 4,160 Get Quote
K4F660812DTC50 2,258 2005+ Get Quote
K4F660812DTC50 6,800 Get Quote
K4F660812DTC50 8,336 2005+ Get Quote
K4F660812DTC50 8,336 05+ Get Quote
K4F660812DTC50 3,200 08+ Get Quote
K4F660812DTC50 960 07+ Get Quote
K4F660812DTC50 12,000 Get Quote
K4F660812DTC50 54 Get Quote
K4F660812DTC50 2 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4F640812B-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812B-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812C-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812C-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812D-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812D-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812E-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812E-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F660812C-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F660812C-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C