K4H510838J-BPB3

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4H510838J-BPB3
Brand SAMSUNG
Item DDR1 SDRAM
Part No 64MX8 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature -40 C~+85 C
Speed 166 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 64M
Bit Organization x8
Density 512M
Internal Banks 4 Banks
Generation 11th Generation
Power Low Power

Available Offers

Description Qty Datecode
K4H510838J-BPB3 4,000 Get Quote
K4H510838J-BPB3 2,000 2010+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EDD5108AGTA-6BLI-E TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400D-6TI TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400D-6TLA1 TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400D-6TLI TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400E-6TI TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400E-6TLA1 TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400E-6TLI TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400F-6TI TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400F-6TLA1 TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C
IS43R86400F-6TLI TSOP2(66) 2.5 V 166 MHZ -40 C~+85 C