K4H510838JBPB0
Product Overview
Images are for reference only
| Manufacturer Part No | K4H510838JBPB0 |
| Brand | SAMSUNG |
| Item | DDR1 SDRAM |
| Part No | 64MX8 DDR1 |
Product Details
| Package | TSOP2(66) |
| Outpack | TRAY |
| RoHS | Leaded |
| Voltage | 2.5 V |
| Temperature | -40 C~+85 C |
| Speed | 133 MHZ |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Low Power |
| Generation | 11th Generation |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4H510838JBPB0 | 4,000 | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EDD5108AGTA-7ALI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| EDD5108AGTA-7BLI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H510838D-UIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H510838D-UPB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H510838JBIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |