K4H561638D/E/H/F-TCC4

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4H561638D/E/H/F-TCC4
Brand SAMSUNG
Item DDR1 SDRAM
Part No 16MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature -40 C~+85 C
Speed 200 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x16
Density 256M
Internal Banks 4 Banks
Power Low, i-TCSR & PASR & DS
Generation 5th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
A3S56D40ETP-G5I TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
A3S56D40FTP-G5I TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
EDD2516AKTA5BTI TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
EDD2516AKTA5CLI TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
EDD2516AKTA5CLIE TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
H5DU2562GTR-E3I TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
HY5DU561622CT-D43HYNIX TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
HY5DU561622DLTPD43I TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
IS43R16160B-5TI TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C
IS43R16160B-5TI-TR TSOP2(66) 2.5 V 200 MHZ -40 C~+85 C